Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-09-25
2010-12-07
Deo, Duy-Vu N (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S714000, C438S724000, C438S725000
Reexamination Certificate
active
07846846
ABSTRACT:
High aspect ratio contact openings are etched while preventing bowing or bending of the etch profile by forming a highly conductive thin film on the side wall of each contact opening. The conductivity of the thin film on the side wall is enhanced by ion bombardment carried out periodically during the etch process.
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patent: 6475920 (2002-11-01), Coburn et al.
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patent: 2008/0203056 (2008-08-01), Wang et al.
Bera Kallol
Deshmukh Subhash
Doan Kenny L.
Wege Stephan
Applied Materials Inc.
Deo Duy-Vu N
Law Office of Robert M. Wallace
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