Method of preparing a silicon dioxide layer by high...

Details Method of preparing a silicon dioxide layer by high... Method of preparing a silicon dioxide layer by high...

2005-03-25

2008-10-14

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S773000, C438S787000

Reexamination Certificate

active

07435690

ABSTRACT:
Method of preparing a silicon dioxide layer by high-temperature oxidation on a substrate of formula Si1-xGexin which x is greater than 0 and less than or equal to 1, the said method comprising the following successive steps:a) at least one additional layer of thickness hyand of overall formula Si1-yGey, in which y is greater than 0 and less than x, is deposited on the said substrate of formula Si1-xGex; andb) the high-temperature oxidation of the said additional layer of overall formula Si1-yGeyis carried out, whereby the said additional layer is completely or partly converted into a layer of silicon oxide SiO2.Method of preparing an optical or electronic component, comprising at least one step for preparing an SiO2layer using the method described above.

REFERENCES:
patent: 6350993 (2002-02-01), Chu et al.
patent: 6727550 (2004-04-01), Tezuka et al.
patent: 7022593 (2006-04-01), Arena et al.
patent: 2005/0098234 (2005-05-01), Nakaharai et al.
patent: 2007/0023066 (2007-02-01), Yokokawa et al.

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