Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2011-01-18
2011-01-18
Nguyen, Dang T (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S230030, C365S051000
Reexamination Certificate
active
07872932
ABSTRACT:
A method and semiconductor memory device for precharging a local input/output line. The semiconductor memory device, which may have an open bit line structure, transmits data through local input/output lines that are coupled to bit lines of first to n-th memory cell array blocks (n being a natural number). The semiconductor memory device may include a precharge unit configured to generate a plurality of precharge signals and a controller configured to control precharging of the at least one local input/output line responsive to block information corresponding to activation of at least one of the memory cell array blocks and responsive to at least one of the precharge signals.
REFERENCES:
patent: 6256245 (2001-07-01), Kwak
patent: 2004/0085841 (2004-05-01), Lim et al.
patent: 2007/0070670 (2007-03-01), Ha et al.
patent: 2006-0005627 (2006-01-01), None
patent: 2006-0038568 (2006-05-01), None
patent: 2006-0064256 (2006-06-01), None
English language abstract of Korean Publication No. 2006-0005627.
English language abstract of Korean Publication No. 2006-0038568.
English language abstract of Korean Publication No. 2006-0064256.
Chu Yong-gyu
Kim Byung-chul
Kim Myeong-O
Muir Patent Consulting, PLLC
Nguyen Dang T
Samsung Electronics Co,. Ltd.
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