Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2011-08-02
2011-08-02
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S706000, C438S738000, C438S947000, C257SE21035, C257SE21036, C257SE21038
Reexamination Certificate
active
07989355
ABSTRACT:
The present disclosure provides a method of fabricating a semiconductor device that includes forming a mask layer over a substrate, forming a dummy layer having a first dummy feature and a second dummy feature over the mask layer, forming first and second spacer roofs to cover a top portion of the first and second dummy features, respectively, and forming first and second spacer sleeves to encircle side portions of the first and second dummy features, respectively, removing the first spacer roof and the first dummy feature while protecting the second dummy feature, removing a first end portion and a second end portion of the first spacer sleeve to form spacer fins, and patterning the mask layer using the spacer fins as a first mask element and the second dummy feature as a second mask element.
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Chang Ming-Ching
Shieh Ming-Feng
Xu Jeff J.
Yen Anthony
Yu Shinn-Sheng
Booker Vicki B
Haynes and Boone LLP
Landau Matthew C
Taiwan Semiconductor Manufacturing Company , Ltd.
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