Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-09-27
2005-09-27
Kielin, Erik (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S702000
Reexamination Certificate
active
06949459
ABSTRACT:
Disclosed is a method that deposits an aqueous material having a pH between approximately 10 and 11 in a first opening and on an oxide hard mask, deposits an organic material on the aqueous material, and patterns a photoresist over the organic material. The invention then etches the organic material and the aqueous material through the photoresist to form a second opening above the first opening and forms a polymer along sidewalls of the second opening. The invention can then perform a wet cleaning process using an alkali solution having a pH between approximately 10 and 11 to remove the aqueous material from the first opening. By utilizing an alkali aqueous (water-based) material having a pH of approximately 10-11, the invention can use a fairly low pH wet etch (pH of approximately 10-11) to completely remove the aqueous solution from the via, thereby eliminating the conventional problem of having residual organic material left within the via.
REFERENCES:
patent: 6329118 (2001-12-01), Hussein et al.
patent: 6872666 (2005-03-01), Morrow
patent: 2004/0121588 (2004-06-01), Choi
“A Novel Approach to Dual Damascene Patterning”, Makarem Husseinm Sam Sivakumar, Ruth Brain, Bruce Beattie, Phi Nguyen, Mark Fradkin, International Interconnect Technology Conference, IITC, Jun. 3-5, 2002, 3 Pages.
Li Wai-Kin
Lin Yi-hsiung
Yang Chih-Chao
Harrison Monica D.
International Business Machines - Corporation
Li, Esq. Todd M.C.
McGinn & Gibb PLLC
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