Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-11-07
1998-03-03
Dutton, Brian
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438931, H01L 21265, H01L 2144, H01L 2148
Patent
active
057233764
ABSTRACT:
A groove is formed on the surface of a semiconductor substrate composed of silicon carbide and a first thermal oxidation film is formed by executing thermal oxidation on a damaged layer of groove inner walls. Then, the first thermal oxidation film is removed so that the damaged layer can be removed. Since a second thermal oxidation film is formed after the damaged layer is removed, the second thermal oxidation film is uniform. A silicon carbide semiconductor device can be achieved with less side etching because substantially a (0001) carbon face of a cubic system is chosen as the plane orientation of the semiconductor substrate.
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Hara Kazukuni
Miyajima Takeshi
Takeuchi Yuuichi
Tokura Norihito
Dutton Brian
Nippondenso Co. Ltd.
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