4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Specified wide band gap semiconductor material other than...

Kazukuni Hara

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Equipment and method for manufacturing silicon carbide...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Manufacturing method for producing silicon carbide crystal...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate

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Manufacturing method for producing silicon carbide crystal...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Reexamination Certificate

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Manufacturing method for producing silicon carbide crystal...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate

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Manufacturing method of silicon carbide single crystals

Stock material or miscellaneous articles – Composite – Of inorganic material
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Profile ID: LFUS-PAI-P-1114336

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