Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-29
2005-11-29
Chen, Jack (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S256000, C438S396000, C438S399000, C438S638000
Reexamination Certificate
active
06969649
ABSTRACT:
A DRAM has, in one embodiment, a plurality of word lines each having its upper and side surfaces covered with a first insulating film, a plurality of bit lines each being provided so as to be insulated from and transverse to the word lines and being covered with a second insulating film, and a plurality of memory cells each provided at an intersection between one word line and one bit line and including a capacitor and a memory cell selection transistor, in which contact holes for connection between semiconductor regions and capacitors and between semiconductor regions and bit lines are formed in self-alignment and the second insulating film is made of a material having a permittivity smaller than that of the first insulating film.
REFERENCES:
patent: 5279989 (1994-01-01), Kim
patent: 5296400 (1994-03-01), Park et al.
patent: 5389560 (1995-02-01), Park
patent: 5554557 (1996-09-01), Koh
patent: 5569948 (1996-10-01), Kim
patent: 5677227 (1997-10-01), Yang et al.
patent: 5688713 (1997-11-01), Linliu et al.
patent: 5710073 (1998-01-01), Jeng et al.
patent: 5914279 (1999-06-01), Yang et al.
Provisional U.S. Appl. No. 60/017,065, Yang, et al., filed Apr. 26, 1996.
Aoki Hideo
Cho Songsu
Kaeriyama Toshiyuki
Kawakita Keizo
Kumai Toshikazu
Antonelli, Terry Stout and Kraus, LLP.
Chen Jack
Hitachi , Ltd.
Texas Instruments Incorporated
LandOfFree
Method of manufacturing semiconductor integrated circuit... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing semiconductor integrated circuit..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor integrated circuit... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3484762