Method of manufacturing semiconductor device with dual gates

Details Method of manufacturing semiconductor device with dual gates Method of manufacturing semiconductor device with dual gates

2006-08-01

2010-06-01

Fulk, Steven J (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S392000, C257SE21637

Reexamination Certificate

active

07727841

ABSTRACT:
In a semiconductor device with dual gates and a method of manufacturing the same, a dielectric layer and first and second metallic conductive layers are successively formed on the semiconductor substrate having first and second regions. The second metallic conductive layer which is formed on the first metallic conductive layer of the second region is etched to form a metal pattern. The first metallic conductive layer is etched using the metal pattern as an etching mask. A polysilicon layer is formed on the dielectric layer and the metal pattern. The first gate electrode is formed by etching portions of the polysilicon layer, the metal pattern, and the first metallic conductive layer of the first region. The second gate electrode is formed by etching a portion of the polysilicon layer formed directly on the dielectric layer of the second region.

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Samavedam et al., “Dual-Metal Gate CMOS with HfO2 Gate Dielectric”, 2002, IEDM Technical Digest, pp. 433-436.

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