Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-12
2008-09-02
Le, Thao X. (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S394000, C257S296000
Reexamination Certificate
active
07419874
ABSTRACT:
The invention is to prevent dielectric breakdown of a capacitor in a semiconductor device having the capacitor and a MOS transistor formed on a same semiconductor substrate. A SiO2film that is to be a gate insulation film of a high voltage MOS transistor is formed on a whole surface of a P-type semiconductor substrate. A photoresist layer is selectively formed in a high voltage MOS transistor formation region and on a part of a SiO2film covering edges of trench isolation films adjacent to a capacitor formation region, and the SiO2film is removed by etching using this photoresist layer as a mask. Since the photoresist layer functions as a mask in this etching, the edges of the trench isolation films adjacent to the capacitor are not cut too deep. The SiO2film remaining in this etching and a SiO2film to be formed thereafter form a capacitor insulation film.
REFERENCES:
patent: 6057572 (2000-05-01), Ito et al.
patent: 6821840 (2004-11-01), Wieczorek et al.
patent: 6855595 (2005-02-01), Han et al.
patent: 2007/0166943 (2007-07-01), Shin
patent: 2002-026261 (2002-01-01), None
Fujishima Tatsuya
Fukuda Mikio
Iida Izuo
Ogata Keiji
Tsukada Yuji
Le Thao X.
Morrison & Foerster / LLP
Sanyo Electric Co,. Ltd.
Trice Kimberly
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