Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2010-09-29
2011-12-13
Lee, Hsien Ming (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S787000, C438S789000, C438S790000, C438S791000, C257SE21274, C257SE21276, C257SE21277, C257SE21293, C427S497000, C427S509000, C427S578000, C118S715000, C118S7230VE, C118S7230ER
Reexamination Certificate
active
08076251
ABSTRACT:
Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an oxide, nitride, or oxynitride film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying and exhausting first and second source gases containing the element into and from the process vessel; and (b) changing the layer containing the element into an oxide, nitride, or oxynitride layer by supplying and exhausting reaction gas different from the first and second source gases into and from the process vessel; and unloading the substrate from the process vessel. The first source gas is more reactive than the second source gas, and an amount of the first source gas supplied into the process vessel is set to be less than that of the second source gas supplied into the process vessel.
REFERENCES:
patent: 2009/0170345 (2009-07-01), Akae et al.
patent: 2002-343793 (2002-11-01), None
patent: 2005-310927 (2005-11-01), None
patent: 2006-054432 (2006-02-01), None
patent: 2009-178309 (2009-08-01), None
Akae Naonori
Hirose Yoshiro
Ota Yosuke
Sasajima Ryota
Takasawa Yushin
Brundidge & Stanger, P.C.
Hitachi Kokusai Electric Inc.
Lee Hsien Ming
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