Method of manufacturing semiconductor device, film-forming...

Details Method of manufacturing semiconductor device, film-forming... Method of manufacturing semiconductor device, film-forming...

2006-08-01

2006-08-01

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S680000, C438S785000

Reexamination Certificate

active

07084023

ABSTRACT:
In a decompressed atmosphere and a heating atmosphere, a vapor of a hafnium organic compound is reacted with, e.g., a disilane gas in a reacting vessel, so as to form a hafnium silicate film on a silicon film. By reacting a dichlorosilane gas with a dinitrogen oxide gas, a silicon oxide film as a barrier layer is laminated on the hafnium silicate film. A polysilicon film as a gate electrode is formed on the silicon oxide film.

REFERENCES:
patent: 6277436 (2001-08-01), Stauf et al.
patent: 6607958 (2003-08-01), Suguro
patent: 6784508 (2004-08-01), Tsunashima et al.
patent: 6844234 (2005-01-01), Eguchi et al.
patent: 6960537 (2005-11-01), Shero et al.
patent: 63-236335 (1988-10-01), None
patent: 2002-167672 (2002-06-01), None
patent: 2002-246388 (2002-08-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device, film-forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, film-forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device, film-forming... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3648346