Method of manufacturing semiconductor device and...

Details Method of manufacturing semiconductor device and... Method of manufacturing semiconductor device and...

2005-05-03

2005-05-03

Parekh, Nitin (Department: 2811)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S629000, C438S637000, C438S638000, C438S639000, C438S672000, C438S675000, C438S696000, C438S780000, C257S774000

Reexamination Certificate

active

06887802

ABSTRACT:
A method of manufacturing a semiconductor device includes forming a first low dielectric constant insulating film over a semiconductor substrate, forming a photoresist pattern on the first low dielectric constant insulating film, etching the first low dielectric constant insulating film to form a concave portion therein, using the photoresist pattern, burying a conductive film in the concave portion after the photoresist pattern is removed, removing an altered layer formed on a sidewall of the concave portion of the first low dielectric constant insulating film after the conductive film is buried, the altered layer being formed when the photoresist pattern is removed, and forming a second low dielectric constant insulating film so as to fill a gap of the sidewall of the concave portion therewith, the gap resulting from removing the altered layer.

REFERENCES:
patent: 5240879 (1993-08-01), De Bruin
patent: 6114259 (2000-09-01), Sukharev et al.
patent: 10-284600 (1998-10-01), None
patent: 2002-009149 (2002-01-01), None

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