Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-11-12
2011-10-25
Stark, Jarrett (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S299000, C438S303000, C438S306000, C257S344000, C257S408000
Reexamination Certificate
active
08043923
ABSTRACT:
Methods of manufacturing a semiconductor device include forming a gate electrode on a semiconductor substrate, forming spacers on side walls of the gate electrode, and doping impurities into the semiconductor substrate on both sides of the spacers to form highly doped impurity regions. The spacers are selectively etched to expose portions of the semiconductor substrate, and more lightly doped impurity regions are formed in the semiconductor substrate between the highly doped impurity regions and the gate electrode.
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Kim Sung-Hwan
Satoru Yamada
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
Stark Jarrett
Tobergte Nicholas
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