Method of manufacturing semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S299000, C438S303000, C438S306000, C257S344000, C257S408000

Reexamination Certificate

active

08043923

ABSTRACT:
Methods of manufacturing a semiconductor device include forming a gate electrode on a semiconductor substrate, forming spacers on side walls of the gate electrode, and doping impurities into the semiconductor substrate on both sides of the spacers to form highly doped impurity regions. The spacers are selectively etched to expose portions of the semiconductor substrate, and more lightly doped impurity regions are formed in the semiconductor substrate between the highly doped impurity regions and the gate electrode.

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patent: 2001-094100 (2001-04-01), None
patent: 1020040087500 (2004-10-01), None

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