Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-12-13

2005-12-13

Kennedy, Jennifer (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S128000, C438S129000, C438S598000, C438S253000, C438S396000

Reexamination Certificate

active

06974745

ABSTRACT:
Disclosed is a method of manufacturing semiconductor devices, which can improve electrical characteristics of semiconductor devices. The method of manufacturing comprises the following steps of: forming a plurality of gates on a semiconductor substrate; forming an insulation layer on an entire surface of the semiconductor substrate to coat the plurality of gates; selectively removing the insulation layer by using a first mask pattern to form a contact hole, which exposes a source/drain junction and a conductive layer in a portion of the gates in the semiconductor substrate; removing the first mask pattern and forming a second mask pattern on the selectively removed insulation layer, the second mask pattern exposing the p+ source/drain junction in the semiconductor substrate; implanting ion into the p+ source/drain junction in the semiconductor substrate by using the second mask pattern as a mask; removing the second mask pattern and rapid thermal annealing the entire substrate in a activation temperature range of dopant which is implanted in the ion implantation step; and burying the contact hole with conductive material to form a bit line contact plug. The invention can effectively reduce bit line contact resistance but raise resistance uniformity without variation in related techniques such as etching and contact material for forming contacts.

REFERENCES:
patent: 5854110 (1998-12-01), Kunitou
patent: 6093629 (2000-07-01), Chen
patent: 6124178 (2000-09-01), Sung et al.
patent: 6200855 (2001-03-01), Lee
patent: 6353269 (2002-03-01), Huang
patent: 6727540 (2004-04-01), Divakaruni et al.

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