Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-30
2011-08-30
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S785000, C257SE21179
Reexamination Certificate
active
08008152
ABSTRACT:
A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, forming the second insulating film comprises forming a lower insulating film containing oxygen and a metal element, thermally treating the lower insulating film in an atmosphere containing oxidizing gas, and forming an upper insulating film on the thermally treated lower insulating film using film forming gas containing at least one of hydrogen and chlorine.
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Notice of Reasons for Rejection, issued by Japanese Patent Office, mailed on Feb. 8, 2011, in a counterpart Japanese application No. 2006-112193, 2 pages.
Fujitsuka Ryota
Natori Katsuaki
Nishida Daisuke
Ozawa Yoshio
Sekine Katsuyuki
Booth Richard A.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
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