Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2011-08-02

2011-08-02

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000, C438S719000, C257SE21438

Reexamination Certificate

active

07989300

ABSTRACT:
A method of manufacturing a semiconductor device includes forming a gate insulating film over a semiconductor substrate, forming a silicon film over the gate insulating film, forming a resist pattern over the silicon film, etching the silicon film to form a protrusion portion of the silicon film, forming a dummy film over the silicon film, etching the dummy film so that the dummy film is partially remained on sidewalls of the protrusion portion, etching the silicon film using the remaining dummy film to form a gate electrode, and performing ion implantation into the semiconductor substrate to form source/drain regions.

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