Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-06-21
2011-06-21
Smith, Matthew S (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S264000
Reexamination Certificate
active
07964462
ABSTRACT:
Provided is a method of manufacturing a semiconductor device. The method includes: forming a charge storage layer on a substrate on which a gate insulating layer is formed; forming a first metal oxide layer on the charge storage layer using a first reaction source including a metal oxide layer precursor and a first oxidizing agent and changing the first metal oxide layer to a second metal oxide layer using a second reaction source including a second oxidizing agent having larger oxidizing power than the first oxidizing agent and repeating the forming of the first metal oxide layer and the changing of the first metal oxide layer to the second metal oxide layer several times to form a blocking insulating layer; and forming an electrode layer on the blocking insulating layer.
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patent: 2008/0265310 (2008-10-01), Kim et al.
patent: 2009/0039416 (2009-02-01), Lai et al.
patent: 2005-026590 (2005-01-01), None
patent: 1020050007496 (2005-01-01), None
patent: 1020050033323 (2005-04-01), None
An Kyong-won
Choi Han-mei
Lee Kwang-Hee
Yoo Cha-young
Yoo Dong-chul
Myers Bigel & Sibley Sajovec, PA
Parker John M
Samsung Electronics Co,. Ltd.
Smith Matthew S
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