Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2011-03-22

2011-03-22

Ho, Tu-Tu V (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C228S116000, C228S180500, C257S784000, C257S786000, C257S773000, C257S776000, C257SE23024

Reexamination Certificate

active

07910472

ABSTRACT:
A semiconductor device with improved bondability between a wire and a bump and cutting property of the wire to improve the bonding quality. In the semiconductor device, a wire is stacked on a pad as a second bonding point to form a bump having a sloped wedge and a first bent wire convex portion, and a wire is looped from a lead as a first bonding point to the bump and is pressed to the sloped wedge of the bump with a face portion of a tip end of a capillary to bond the wire to the bump. At the same time, the wire is pressed to the first bent wire convex portion using an inner chamfer of a bonding wire hole in the capillary to form a wire bent portion having a bow-shaped cross section. The wire is pulled up and cut at the wire bent portion.

REFERENCES:
patent: 6206273 (2001-03-01), Beaman et al.
patent: 6601752 (2003-08-01), Maeda et al.
patent: 2-199846 (1990-08-01), None
patent: 5-144280 (1993-06-01), None
patent: 2002-280410 (2002-09-01), None
patent: 2004-247672 (2004-09-01), None

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