Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
1999-03-09
2001-07-31
Chaudhuri, Olik (Department: 2814)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S297000, C438S449000
Reexamination Certificate
active
06268298
ABSTRACT:
CROSS REFERENCE TO RELATED APPLICATION
This application is based upon and claims the benefit of Japanese Patent Application No. 10-57771, filed on Mar. 10, 1998, the contents of which are incorporated herein by reference.
BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to a method of manufacturing a semiconductor device, and specifically to a technique for preventing stacking faults, especially, oxidation induced stacking faults (OSFs), from being generated on a silicon surface at a silicon oxidation step.
2. Description of the Related Art
Various kinds of crystal defects in LSIs have been widely studied and reported by many documents. Among these researches concerning crystal defects, a method for preventing crystal defects, especially OSFs from being produced after a heat treatment in an LSI manufacturing process is actively studied.
For instance, it is reported that OSFs are caused by (1) defects mechanically formed on a wafer surface, (2) metallic contaminations, (3) oxidized depositions, and the like. This kind of reports, however, only describe the occurrence causes of OSFs, and fail to teach how to control it. In addition, in many cases, OSFs are produced in combination with various factors in the LSI manufacturing process. Therefore, it is not always improved even if a teaching is adopted to the manufacturing process as it is reported.
JP-A-3-217019 discloses that it is effective to preheating a wafer before oxidation in order to prevent generation of OSFs, since the crystal defects are liable to be produced on the wafer when the wafer is oxidized with damages caused by ion-implantation or plasma treatment. However, according to experiments by the inventors of the present invention, the generation of OSFs was not prevented only by hearing. It is required to find out a specific controlling technique for preventing the generation of OSFs.
SUMMARY OF THE INVENTION
The present invention has been made in view of the above problem. An object of the present invention is to provide a method of manufacturing a semiconductor device, capable of effectively preventing crystal defects (OSFs) from being produced on a silicon substrate surface during a semiconductor manufacutirng process.
According to the present invention, in a method of manufacturing a semiconductor device including a step for forming an oxide film after implanting ions into a silicon substrate, the silicon substrate is disposed within a furnace after implanting ions and before forming the oxide film. Then, a heat treatment is carried out for a specific time period. When the heat treatment is carried out for the specific time period, or when a temperature is raised up to a heat treatment temperature, inert gas is supplied into the furnace together with oxygen. Accordingly, crystal defects (OSFs) can be effectively prevented from being produced on the silicon substrate surface in the semiconductor manufacturing process.
The heat treatment temperature is preferably equal to or higher than 950° C. An amount of oxygen that is supplied during the heat treatment is preferably equal to or less than 2%. Further, the specific time period of the heat treatment is preferably equal to or longer than 15 minutes. An amount of oxygen that is supplied when the temperature is raised up to the heat treatment temperature is preferably equal to or less than 5%. After the heat treatment is carried out for the specific time period, the oxide film can be formed within the same furnace.
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“Oxygen Precipitation and OSF” pp. 199-220.
“VLSI Manufacturing Technology” Tokuyama & Hashimoto: Nikkei BP, pp. 61-63, Jan. 14, 1989.
Funahashi Hirofumi
Ishii Masahiko
Iwamori Noriyuki
Koike Manabu
Komura Atsushi
Chaudhuri Olik
Denso Corporation
Peralta Ginette
Pillsbury & Winthrop LLP
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