Method of manufacturing NOR-type mask ROM device and...

Details Method of manufacturing NOR-type mask ROM device and... Method of manufacturing NOR-type mask ROM device and...

2007-08-07

2007-08-07

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S278000

Reexamination Certificate

active

10899136

ABSTRACT:
A method of manufacturing a NOR-type mask ROM device includes forming a first gate electrode for an OFF cell and a second gate electrode for an ON cell on a semiconductor substrate of a first conductivity type. To code the mask ROM device, a plurality of source/drain regions is formed by implanting impurities of a second conductivity type, opposite the first conductivity type, into the semiconductor substrate adjacent only to one side of the first gate electrode and adjacent to both sides of the second gate electrode. To prevent misalignment of a bit line contact hole with a contact region, additional impurities are implanted only into a bit line contact region of the mask ROM device region. When a semiconductor device formed on the same substrate as the mask ROM device includes a double diffused region, additional implantation for both may be realized simultaneously.

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