Method of manufacturing flash memory device

Details Method of manufacturing flash memory device Method of manufacturing flash memory device

2006-06-16

2009-10-13

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S315000, C257SE21680

Reexamination Certificate

active

07601589

ABSTRACT:
The invention provides a method of manufacturing a flash memory device. Nitride film spacers are formed on sidewalls of protruded isolation films. A recess is formed in a semiconductor substrate by a self-aligned etch process using the nitride film spacers as masks. It is therefore possible to form a uniform recess over the entire wafer. Furthermore, a floating gate is formed on the semiconductor substrate including the recess in a self-aligned manner. Accordingly, a contact area between the floating gate and the semiconductor substrate can be increased as large as a recess surface area.

REFERENCES:
patent: 3775274 (1973-11-01), Rust et al.
patent: 5496750 (1996-03-01), Moslehi
patent: 5605603 (1997-02-01), Grimard et al.
patent: 5963816 (1999-10-01), Wang et al.
patent: 6284597 (2001-09-01), Hong
patent: 6284637 (2001-09-01), Chhagan et al.
patent: 6461923 (2002-10-01), Hui et al.
patent: 6503799 (2003-01-01), Horita et al.
patent: 6825526 (2004-11-01), He et al.
patent: 2002/0092546 (2002-07-01), Twu et al.
patent: 2004/0157403 (2004-08-01), Han et al.
patent: 2004/0157444 (2004-08-01), Chiu et al.
patent: 2005/0040475 (2005-02-01), Jang et al.
patent: 2006/0118861 (2006-06-01), Van Schaijk et al.
patent: 2006/0187711 (2006-08-01), Jang
patent: 2007/0049040 (2007-03-01), Bai et al.
patent: 1020010053905 (2001-07-01), None

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