Method of manufacturing capacitors for semiconductor devices

Details Method of manufacturing capacitors for semiconductor devices Method of manufacturing capacitors for semiconductor devices

2007-01-16

2007-01-16

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000

Reexamination Certificate

active

10357383

ABSTRACT:
Capacitors for semiconductor devices and methods of fabricating such capacitors are provided. The disclosed capacitor comprises an interlayer dielectric layer (ILD) pattern having an opening exposing a portion of the underlying semiconductor substrate, a silicide pattern formed on the exposed substrate, and a lower electrode covering an inner wall and bottom of the opening. A dielectric layer is formed on the lower electrode, and an upper electrode is disposed on the dielectric layer. The dielectric layer preferably comprises a high k-dielectric layer such as tantalum oxide. The disclosed method comprises forming an ILD pattern with an opening that exposes a portion of a semiconductor substrate forming an optional silicide pattern on the exposed substrate, forming a lower electrode on the inner wall of the opening, and sequentially forming a dielectric layer and an upper electrode on the resulting structure.

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