Method of manufacturing capacitor of semiconductor device

Details Method of manufacturing capacitor of semiconductor device Method of manufacturing capacitor of semiconductor device

2006-01-11

2008-10-14

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S397000, C438S723000, C438S743000, C438S756000

Reexamination Certificate

active

07435644

ABSTRACT:
Provided is a method of manufacturing a capacitor of a semiconductor device, which can prevent tilting or an electrical short of a lower electrode. In the method, a mesh-type bridge insulating layer is formed above the contact plug on a mold oxide layer. The mold oxide layer and the bridge insulating layer are etched to define an electrode region. The mold oxide layer is removed using an etching gas having an etch selectivity of 500 or greater for the mold oxide layer with respect to the bridge insulating layer.

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