Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-04-29
2000-06-13
Wilczewski, Mary
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438250, 438252, 438393, 438396, 438631, 438692, 438633, 438253, H01L 2170, H01L 21302, H01L 21304
Patent
active
060749075
ABSTRACT:
A method of manufacturing a capacitor whose top and bottom electrodes have the nearly equal doping concentrations. In the method, a top surface of the capacitor top electrode is polished by a CMP (chemical mechanical polishing) and then doped using the same doping process as the capacitor bottom electrode, so that other elements can be isolated during the doping process. After forming the capacitor bottom electrode, thermal oxidation is performed so that the injected impurity ions of the capacitor bottom electrode are segregated toward a top surface portion thereof. With this method, a doping concentration at the top surface portion of the capacitor bottom electrode becomes higher than that at other portions thereof, and thereby the capacitor top and bottom electrodes may have a nearly same doping concentration at the interface therebetween.
REFERENCES:
patent: 5037772 (1991-08-01), McDonald
patent: 5429976 (1995-07-01), Hong et al.
patent: 5434098 (1995-07-01), Chang
patent: 5631188 (1997-05-01), Chang et al.
patent: 5670410 (1997-09-01), Pan
Kim Young-Wug
Oh Chang-bong
Lin Yung A.
Samsung Electronics Co,. Ltd.
Wilczewski Mary
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