Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-07
2006-03-07
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S240000, C438S243000, C438S253000, C438S386000, C438S396000, C438S745000
Reexamination Certificate
active
07008837
ABSTRACT:
In a method of manufacturing a capacitor by performing a multi-stepped wet treatment on the surface of a metal electrode, a lower metal electrode of a capacitor is formed, and a primary wet treatment is performed on the surface of the lower metal electrode to remove unwanted surface oxides that may exist on the surface of the lower metal electrode. A secondary wet treatment is then performed on the surface of the lower metal electrode by using a different etchant than the etchant used in the primary wet treatment, in order to remove unwanted surface organic materials that may exist on the surface of the lower metal electrode. A dielectric layer is then formed on the lower metal electrode using a high-k dielectric material. An upper metal electrode is formed on the dielectric layer.
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Chung Jung-hee
Jeong Yong-kuk
Kwon Dae-jin
Oh Se-hoon
Won Seok-jun
Fourson George
Garcia Joannie Adelle
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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