Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-04-03
2007-04-03
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S235000, C257S378000, C257S370000, C257SE27015
Reexamination Certificate
active
10944156
ABSTRACT:
A method of manufacturing a bipolar-complementary metal oxide semiconductor (BiCMOS) is provided. A gate in a CMOS area and a conductive layer pattern defining an opening, which opens an active region in a bipolar transistor area, are simultaneously formed by patterning a gate conductive layer. Thereafter, bipolar transistor manufacturing processes are performed while CMOS manufacturing processes are performed. Accordingly, the number of masks is decreased, and degradation of device characteristics is prevented.
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Budd Paul
Jackson Jerome
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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