Method of manufacturing an ILD layer by plasma treatment before

Details Method of manufacturing an ILD layer by plasma treatment before Method of manufacturing an ILD layer by plasma treatment before

1996-12-20

1999-05-11

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L21/316

Patent

active

059021225

ABSTRACT:
A method of manufacturing a semiconductor device is provided. A first interlayer insulating layer is formed on a silicon substrate, and a lower metal layer is formed on the first interlayer insulating layer. A first insulating layer is formed on the first interlayer insulating layer including the lower metal layer, moisture contained in the first insulating layer is removed by N.sub.2 or N.sub.2 O plasma. Thereafter, a SOG layer and a second insulating layer are sequentially formed on the first insulating layer.

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patent: 5656123 (1997-08-01), Saliman et al.
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