Method of manufacturing a split-gate flash memory device

Details Method of manufacturing a split-gate flash memory device Method of manufacturing a split-gate flash memory device

2007-01-30

2007-01-30

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

10905535

ABSTRACT:
A method of manufacturing a split-gate flash memory device is disclosed. On a semiconductor substrate having a plurality of parallel conductive lines, a plurality of doped regions are formed by an ion implantation using the conductive lines as mask. Then, the conductive lines are trimmed for thinning the cover area. Afterward, a composite dielectric layer is formed on the substrate and covers the conductive lines. Finally, a plurality of word lines are formed on the composite dielectric layer.

REFERENCES:
patent: 5705439 (1998-01-01), Chang
patent: 6674132 (2004-01-01), Willer

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