Method of manufacturing a semiconductor memory device

Details Method of manufacturing a semiconductor memory device Method of manufacturing a semiconductor memory device

2007-02-06

2007-02-06

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S288000

Reexamination Certificate

active

10987340

ABSTRACT:
A tunneling dielectric layer, a charge trapping layer, a first length defining layer, and a second length defining layer are sequentially deposited on a semiconductor substrate. These layers are sequentially patterned. Exposed both sidewalls of the first length defining layer first pattern are recessed by selective side etching. After forming a blocking layer for covering the exposed charge trapping layer and a gate layer for filling the recessed portion, the gate layer is patterned to form spacer shaped gates. Dopant regions for source and drain regions are formed on the semiconductor substrate adjacent the gates.

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