Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2006-08-15
2006-08-15
Crane, Sara (Department: 2811)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S341000
Reexamination Certificate
active
07091056
ABSTRACT:
When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III–V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III–V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III–V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.
REFERENCES:
patent: 6015979 (2000-01-01), Sugiura et al.
patent: 6362515 (2002-03-01), Hayakawa
patent: 6606335 (2003-08-01), Kuramata et al.
patent: 6667184 (2003-12-01), Motoki et al.
patent: 2001/0016404 (2001-08-01), Hayakawa
patent: 2001/0025989 (2001-10-01), Shibuya et al.
patent: 2001/0029086 (2001-10-01), Ogawa et al.
patent: 2001/0032975 (2001-10-01), Yamaguchi et al.
patent: 2001/0038655 (2001-11-01), Tanaka et al.
patent: 2002/0048964 (2002-04-01), Yuasa et al.
patent: 2002/0064195 (2002-05-01), Takeya et al.
patent: 1 005 068 (2000-05-01), None
patent: 1 088 914 (2001-04-01), None
patent: 11-103135 (1999-04-01), None
patent: 11-195813 (1999-07-01), None
patent: 11-238687 (1999-08-01), None
patent: 2000-21789 (2000-01-01), None
patent: 2000-164929 (2000-06-01), None
patent: 2000-353669 (2000-12-01), None
patent: 2001-257193 (2001-09-01), None
patent: 2002-033512 (2002-01-01), None
patent: 2003-078214 (2003-03-01), None
M. Suzuki, “Review on Future Ferroelectric Nonvolatile Memory: FeRAM”, Journal of the Ceramic Society of Japan, vol. 103, No. 11 (1995), pp. 1099-1111.
M. Suzuki, et al., “A proposal of epixtaxial axide thin film structure for future oxide electronics”, Materials Science and Engineering B41 (1996), pp. 166-173.
Asatsuma Tsunenori
Goto Osamu
Motoki Kensaku
Tamamura Koshi
Tojo Tsuyoshi
Crane Sara
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
Sumitomo Electric Industries Ltd.
LandOfFree
Method of manufacturing a semiconductor light emitting... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor light emitting..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor light emitting... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3694525