4. Coating apparatus
  5. Gas or vapor deposition
  6. With treating means

Koshi Tamamura

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Determination of critical film thickness of a compound semicondu

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Patent

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Determination of critical film thickness of a compound semicondu

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Patent

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EL semiconductor device

Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate

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MBE system and semiconductor device fabricated, using same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With movement of substrate or vapor or gas supply means...
Patent

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Method for growing a II-VI compound semiconductor layer containi

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Dopant introduction into semiconductor region
Patent

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Profile ID: LFUS-PAI-P-1245312

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