4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Incoherent light emitter structure
  6. With heterojunction

Kensaku Motoki

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A1 x In y Ga 1-x-y N mixture crystal substrate, method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate

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Al x In y Ga 1−x−y N mixture crystal substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate

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Al x In y Ga 1-x-y N mixture crystal substrate, method of...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate

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Epitaxial wafer and method of preparing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent

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Epitaxial wafer having a gallium nitride epitaxial layer...

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
Reexamination Certificate

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Profile ID: LFUS-PAI-P-905627

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