Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-29
2005-11-29
Smith, Brad (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S287000, C438S424000
Reexamination Certificate
active
06969660
ABSTRACT:
The major surface of a semiconductor substrate of a semiconductor device includes first and second regions and a boundary area therebetween. A first gate insulating film and a first gate electrode are formed in the first region. A second gate insulating film different from the first gate insulating film and a second gate electrode are formed in the second region. A device isolation region is formed in the boundary area. This device isolation region includes a trench formed in the major surface, and an insulating layer having a portion buried in the trench and a portion projecting upward from the major surface. The bottom of the trench has depths different with portions.
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Goda Akira
Hazama Hiroaki
Matsui Michiharu
Noguchi Mitsuhiro
Takeuchi Yuji
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Smith Brad
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