Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-08-14
2007-08-14
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S593000, C438S692000, C257SE21209, C257SE21304, C257SE21422, C257SE21680
Reexamination Certificate
active
11149702
ABSTRACT:
In a method of manufacturing a semiconductor device, an isolation pattern is formed on a substrate. The isolation pattern includes an opening that exposes a portion of the substrate. A preliminary polysilicon layer is formed on the substrate and the isolation pattern to partially fill up the opening. A sacrificial layer is formed on the preliminary polysilicon layer. The sacrificial layer is partially etched to expose a portion of the preliminary polysilicon layer formed on a shoulder portion of the isolation pattern. A first polysilicon layer is formed by etching the exposed portion of the preliminary polysilicon layer to enlarge an upper width of the opening. After the etched sacrificial layer is removed, a second polysilicon layer is formed on the first polysilicon layer to fill up the enlarged opening. Because the upper width of the opening is larger than the lower width, no seam or void would be generated in the second polysilicon layer, therefore improving the electrical characteristics and reliability of the device.
REFERENCES:
patent: 5922619 (1999-07-01), Larkin
patent: 6221715 (2001-04-01), Chen
patent: 6326263 (2001-12-01), Hsieh
patent: 6475894 (2002-11-01), Huang et al.
patent: 6924220 (2005-08-01), Yang et al.
patent: 7183153 (2007-02-01), Lutze et al.
patent: 2001/0002714 (2001-06-01), Doan
patent: 2002/0025631 (2002-02-01), Bez et al.
patent: 2002/0102793 (2002-08-01), Wu
patent: 2002/0190307 (2002-12-01), Tuan et al.
patent: 2004/0163324 (2004-08-01), Lee et al.
patent: 2002-208629 (2002-07-01), None
patent: 2004-0005230 (2004-01-01), None
English language abstract of the Korean Publication No. 2004-0005230.
English language abstract of the Japanese Publication No. 2002-208629.
Kim Min
Kim Taek-Jung
Lebentritt Michael
Marger & Johnson & McCollom, P.C.
Pompey Ron
Samsung Electronics Co,. Ltd.
LandOfFree
Method of manufacturing a semiconductor device with a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor device with a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device with a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3834795