Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-11-20
2007-11-20
Pham, Hoai (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S270000, C257SE21655
Reexamination Certificate
active
11552359
ABSTRACT:
A semiconductor device capable of suppressing void migration is provided. The semiconductor device includes a dummy region extending in a first direction substantially perpendicular to a second direction in which a word line extends. In addition, an isolation layer pattern may not cut the dummy region in the second direction. Consequently, leaning of the dummy region and void migration are prevented. A method of fabricating the semiconductor device is also provided.
REFERENCES:
patent: 6903428 (2005-06-01), Lee
patent: 7122431 (2006-10-01), Kim et al.
patent: 10-0199368 (1999-03-01), None
patent: 10-0281128 (2000-11-01), None
English language abstract for Korean Publication No. 10-0199368.
English language abstract for Korean Publication No. 10-0281128.
Ha Dae-Won
Jin Gyo-Young
Kim Mi-Youn
Kim Yong-Tae
Kim Yun-Gi
Marger & Johnson & McCollom, P.C.
Pham Hoai
Samsung Electronics Co,. Ltd.
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