Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-08-01
2011-11-08
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C427S314000, C118S715000, C118S719000, C118S725000
Reexamination Certificate
active
08053324
ABSTRACT:
In one aspect provides a method of manufacturing a semiconductor device having improved transistor performance. In one aspect, this improvement is achieved by conducting a pre-deposition spacer deposition process wherein a temperature of a bottom region of a furnace is higher than a temperature of in the top region and is maintained for a predetermined period. The pre-deposition temperature is changed to a deposition temperature, wherein a temperature of the bottom region is lower than a temperature of the top region.
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Beatty James H.
Hubregsen Joshua J.
Sucher Bradley D.
Whitesell Christopher S.
Brady III Wade J.
Dehne Aaron
Franz Warren L.
Nguyen Ha Tran T
Telecky , Jr. Frederick J.
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