Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-11
2008-10-21
Ho, Tu-Tu V (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S371000, C257S344000, C257SE21626, C257SE21632, C257S900000
Reexamination Certificate
active
07439124
ABSTRACT:
Method of manufacturing a semiconductor device includes: forming a substrate protection film to cover an n-type FET forming region having a first gate electrode and a p-type FET forming region having a second gate electrode; opening the p-type FET forming region by patterning a resist film after the resist film is formed to cover the n-type FET and p-type FET forming regions; exposing the surface of the semiconductor substrate by selectively removing the substrate protection film in the p-type FET forming region, leaving the film only on side walls of the second gate electrode; forming a pair of p-type extension regions at both sides of the second gate electrode, by doping impurities to the semiconductor substrate, with the resist film, the second gate electrode, and the substrate protection film formed on side walls of the second electrode; and removing the resist film formed on the n-type FET forming region.
REFERENCES:
patent: 5439834 (1995-08-01), Chen
patent: 2006/0170117 (2006-08-01), Tamura et al.
patent: 2004-349372 (2004-12-01), None
Fukai Toshinori
Sakakidani Akihito
Ho Tu-Tu V
NEC Electronics Corporation
Young & Thompson
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