Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2007-12-25

2007-12-25

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S218000, C438S279000

Reexamination Certificate

active

11079296

ABSTRACT:
A method of manufacturing a semiconductor device includes forming first and second active regions and a field region in a surface of a substrate; forming a first gate insulating film in the first and second active regions; covering the surface of the substrate with a first polycrystalline silicon film; exposing the first gate insulating film on the second active region by forming an aperture in the first polycrystalline silicon film over the second active region; removing the first gate insulating film in the second active region; forming a second gate insulating film which is thicker than the first gate insulating film in the second active region; covering the surface of the substrate with a second polycrystalline silicon film; removing the second polycrystalline silicon film on the first active region until it becomes a predetermined film thickness; and forming gate electrodes on the first and second active regions.

REFERENCES:
patent: 5668035 (1997-09-01), Fang et al.
patent: 6518130 (2003-02-01), Ohno
patent: 2003/0027384 (2003-02-01), Kawasaki et al.
patent: 2006/0205129 (2006-09-01), Sato et al.
patent: 02-271659 (1990-06-01), None
patent: 04-297063 (1992-10-01), None

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