Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2006-01-03

2006-01-03

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S652000, C438S760000, C438S778000, C438S792000

Reexamination Certificate

active

06982223

ABSTRACT:
A method of manufacturing a semiconductor device by which a generation of a void is prevented after depositing an interlayer dielectric material. First, a plurality of conductive patterns are formed on a substrate and then, a capping insulation layer is formed on the conductive patterns. The capping insulation layer is treated with plasma, and an interlayer dielectric material is deposited on the plasma treated capping insulation layer. The dependency of the interlayer dielectric on the type of material and form of an underlying layer is reduced to improve a gap-filling characteristic, especially for a gap having a high aspect ratio. An improved gap-filling characteristic is accomplished and the formation of all or substantially all of the voids from forming in a gap is prevented even though an interlayer dielectric is deposited under a conventional deposition conditions.

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