Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2006-05-30

2006-05-30

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S476000

Reexamination Certificate

active

07052943

ABSTRACT:
A technique of using a metal element that has a catalytic action over crystallization of a semiconductor film to obtain a crystalline semiconductor film and then effectively removing the metal element remaining in the film is provided. A first semiconductor film (104) having a crystal structure is formed on a substrate. A barrier layer (105) and a second semiconductor film (106) containing a rare gas element are formed on the first semiconductor film (104). A metal element contained in the first semiconductor film (104) is moved to the second semiconductor film (106) through the barrier layer (105) by heat treatment for gettering.

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