Method of manufacturing a nonvolatile semiconductor memory devic

Details Method of manufacturing a nonvolatile semiconductor memory devic Method of manufacturing a nonvolatile semiconductor memory devic

1997-11-20

1999-11-02

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438257, 438262, 438264, 438265, 257316, 257317, H01L 21336, H01L 29788

Patent

active

059769343

ABSTRACT:
In a method of manufacturing a nonvolatile semiconductor memory device, a first polysilicon conductive layer, which is formed in a peripheral circuit region on a semiconductor substrate with a third gate insulating film interposed therebetween, is patterned into the shape of a gate electrode. A gate bird's beak is formed below the gate electrode in the peripheral circuit region by means of a heat treatment in an oxidizing atmosphere. Subsequently, in a memory cell array region, the first polysilicon conductive layer and a second polysilicon conductive layer laminated thereabove are processed to obtain a stacked gate structure.

REFERENCES:
patent: 5766996 (1998-06-01), Hayakawa et al.
patent: 5879990 (1999-03-01), Dormans et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a nonvolatile semiconductor memory devic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a nonvolatile semiconductor memory devic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a nonvolatile semiconductor memory devic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2134421