Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-11-25
2000-07-25
Chaudhuri, Olik
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438258, H01L 21336
Patent
active
060936053
ABSTRACT:
A nonvolatile memory device in which an electrically conductive "program assist plate" is formed over the nonvolatile memory cells. Appropriate voltages are applied to the program assist plate to greatly increase the cell coupling ratio, thereby reducing the program and erase voltages, and increasing the speed of operation. The manufacturing process is simple, and it results in a more planar structure which facilitates subsequent manufacturing processes.
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Choi Jung-dal
Mang Kyong-moo
Chaudhuri Olik
Coleman William David
Samsung Electronics Co,. Ltd.
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