Method of manufacturing a non-volatile semiconductor device

Details Method of manufacturing a non-volatile semiconductor device Method of manufacturing a non-volatile semiconductor device

2011-01-11

2011-01-11

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S593000, C438S594000, C257SE21423, C257SE29309

Reexamination Certificate

active

07867849

ABSTRACT:
Example embodiments relate to methods of fabricating a non-volatile memory device. According to example embodiments, a method of fabricating a non-volatile memory device may include forming at least one gate structure on an upper face of a substrate. The at least one gate structure may include a tunnel insulation layer pattern, a charge storing layer pattern, a dielectric layer pattern and a control gate. According to example embodiments, a method of fabricating a non-volatile memory device may also include forming a silicon nitride layer on the upper face of the substrate to cover the at least one gate structure, forming an insulating interlayer on the silicon nitride layer on the upper face of the substrate, and providing an annealing gas toward the upper face of the substrate and a lower face of the substrate to cure defects of the tunnel insulation layer pattern.

REFERENCES:
patent: 6521977 (2003-02-01), Burnham et al.
patent: 6677213 (2004-01-01), Ramkumar et al.
patent: 6774462 (2004-08-01), Tanaka et al.
patent: 6815805 (2004-11-01), Weimer
patent: 6913969 (2005-07-01), Yoo
patent: 6921937 (2005-07-01), Weimer
patent: 2002/0102777 (2002-08-01), Sakaguchi et al.
patent: 2000-223674 (2000-08-01), None
patent: 10-0667920 (2007-01-01), None

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