Method of manufacturing a MOSFET by forming a single oxide layer

Details Method of manufacturing a MOSFET by forming a single oxide layer Method of manufacturing a MOSFET by forming a single oxide layer

1997-06-16

2000-07-11

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438525, 438981, H01L 21336

Patent

active

060872373

ABSTRACT:
A thick oxide layer is formed over a drain region of an MOS transistor while a thin oxide layer is provided over the source and channel regions. As a result both improved current driving ability and reduced gate induced drain leakage current are achieved.

REFERENCES:
patent: 4288801 (1981-09-01), Ronen
patent: 4748134 (1988-05-01), Holland et al.
patent: 5115296 (1992-05-01), Hsue et al.
patent: 5126809 (1992-06-01), Hirai
patent: 5172196 (1992-12-01), Matsukawa et al.
patent: 5480828 (1996-01-01), Hsu et al.
patent: 5518942 (1996-05-01), Shrivastava
patent: 5576226 (1996-11-01), Hwang
patent: 5681768 (1997-10-01), Smayling
patent: 5882993 (1999-03-01), Gardener et al.
Stanley Wolf Ph.D. and Richard N. Tauber Ph.D. in Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, pp. 292-293, 1986.
Stanley Wolf Ph.D. in Silicon Processing for the VLSI Era, vol. 2: Process Integration, Lattice Press, p. 354, 1990.
D. Roddy, Introduction to Microelectronics, Pergamon Press, 1978, pp. 96-99.
Josquin and Tamminga, "The Oxidation Inhibition in Nitrogen-Implanted Silicon", Journal of the Electrochemical Society, Solid-State Science and Technology, V. 129, #8, Aug. 1982, pp. 1803-1811.

Affiliated with

Also associated with

Rating

Method of manufacturing a MOSFET by forming a single oxide layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a MOSFET by forming a single oxide layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a MOSFET by forming a single oxide layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-541803