Method of manufacturing a MOS transistor of a semiconductor...

Details Method of manufacturing a MOS transistor of a semiconductor... Method of manufacturing a MOS transistor of a semiconductor...

2006-06-27

2006-06-27

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S232000, C438S530000

Reexamination Certificate

active

07067370

ABSTRACT:
A method of manufacturing a transistor of a semiconductor device is provided. The method includes forming an N type gate pattern and a P type gate pattern on a substrate, implanting N type impurities into an N type transistor area, forming an insulation layer on the substrate including the N type gate pattern, forming a first spacer on a sidewall of the P type gate pattern by partially etching the insulation layer in a P type transistor area, and implanting P type impurities into the P type gate pattern and into the P type transistor area, thereby forming a CMOS transistor on the substrate. Thus, damage to the substrate and the transistor is prevented, thereby improving electrical characteristics of the transistor.

REFERENCES:
patent: 5015595 (1991-05-01), Wollesen
patent: 5872047 (1999-02-01), Lee et al.
patent: 0057380 (1999-07-01), None
English Abstract***.

Affiliated with

Also associated with

Rating

Method of manufacturing a MOS transistor of a semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a MOS transistor of a semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a MOS transistor of a semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3642512