Method of manufacturing a memory device

Details Method of manufacturing a memory device Method of manufacturing a memory device

2009-06-25

2011-10-11

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S240000, C257SE21645, C257SE21646, C257SE27084

Reexamination Certificate

active

08034680

ABSTRACT:
Provided are a memory device formed using one or more source materials not containing hydrogen as a constituent element and a method of manufacturing the memory device.

REFERENCES:
patent: 5396095 (1995-03-01), Wolters et al.
patent: 5508540 (1996-04-01), Ikeda et al.
patent: 6185122 (2001-02-01), Johnson et al.
patent: 6709991 (2004-03-01), Kawahara et al.
patent: 6830786 (2004-12-01), Yuda et al.
patent: 7077904 (2006-07-01), Cho et al.
patent: 7265403 (2007-09-01), Ito
patent: 7297559 (2007-11-01), Honma et al.
patent: 7425512 (2008-09-01), Udayakumar et al.
patent: 7807995 (2010-10-01), Mikawa et al.
patent: 2003/0089954 (2003-05-01), Sashida
patent: 2006/0097288 (2006-05-01), Baek et al.
patent: 2006/0268594 (2006-11-01), Toda
patent: 2007/0205456 (2007-09-01), Lee et al.
patent: 2009/0184396 (2009-07-01), Kim et al.
patent: 2010/0065807 (2010-03-01), Takagi et al.
patent: 10-2005-0094690 (2005-09-01), None
patent: 10-2006-0003211 (2006-01-01), None
patent: 10-0564609 (2006-03-01), None
patent: 10-2006-0042734 (2006-05-01), None
patent: 10-2007-0014410 (2007-02-01), None
patent: 10-2007-0062435 (2007-06-01), None
patent: WO 2007/010746 (2007-01-01), None
An English language abstract of Korean Publication No. 10-2004-0077462, published Sep. 4, 2004.
U.S. Office Action dated Jul. 19, 2010.
U.S. Office Action dated Dec. 29, 2010, U.S. Appl. No. 12/289,069.
Extended European Search Report for European Appln. No. 09163580.5 dated Aug. 3, 2011.

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