Method of manufacturing a memory device

Details Method of manufacturing a memory device Method of manufacturing a memory device

2005-12-08

2008-08-05

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S593000, C438S508000, C438S508000

Reexamination Certificate

active

07407856

ABSTRACT:
A method of manufacturing a memory device includes defining a field region and an active region in a substrate, forming a field oxide layer on the field region, forming an insulating layer on the active region, patterning the insulating layer to form first and second bit lines separated from and parallel to each other on the active region, forming a memory element for storing data in a nonvolatile state, wherein the memory element passes across the first and second bit lines, and forming a word line on the insulating layer and the memory element.

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