Method of manufacturing a high speed bipolar transistor in a CMO

Details Method of manufacturing a high speed bipolar transistor in a CMO Method of manufacturing a high speed bipolar transistor in a CMO

1997-08-11

1998-06-16

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438234, 148DIG9, H01L 218238

Patent

active

057669902

ABSTRACT:
Fabrication of a high frequency bipolar transistor structure is integrated into a CMOS process flow with minimal additional cost. The polysilicon emitter of the bipolar device and the polysilicon gate of the MOS device use separate polysilicon layers and, therefore, allow the bipolar emitter and the MOS gate to be doped independently of each other. The process scheme does not require the MOS device to be subdivided.

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J. Kirchgessner, et al., "An Advanced 0.4.mu.m BiCMOS Technology For High Performance ASIC Applications", IEDM, 1997, pp. 97-100.

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