Method of manufacturing a flash memory device having...

Details Method of manufacturing a flash memory device having... Method of manufacturing a flash memory device having...

2006-07-27

2009-10-27

Mai, Anh D (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000, C438S594000, C257SE27103

Reexamination Certificate

active

07608509

ABSTRACT:
In a semiconductor device and a method of manufacturing the semiconductor device, preliminary isolation regions having protruded upper portions are formed on a substrate to define an active region. After an insulation layer is formed on the active region, a first conductive layer is formed on the insulation layer. The protruded upper portions of the preliminary isolation regions are removed to form isolation regions on the substrate and to expose sidewalls of the first conductive layer, and compensation members are formed on edge portions of the insulation layer. The compensation members may complement the edge portions of the insulation layer that have thicknesses substantially thinner than that of a center portion of the insulation layer, and may prevent deterioration of the insulation layer. Furthermore, the first conductive layer having a width substantially greater than that of the active region may enhance a coupling ratio of the semiconductor device. Thus, the semiconductor device may have improved electrical characteristics and reliability.

REFERENCES:
patent: 5104819 (1992-04-01), Freiberger et al.
patent: 5698879 (1997-12-01), Aritome et al.
patent: 6222224 (2001-04-01), Shigyo
patent: 6281050 (2001-08-01), Sakagami
patent: 6476438 (2002-11-01), Shimizu
patent: 6551948 (2003-04-01), Ohmi et al.
patent: 6555434 (2003-04-01), Koh
patent: 6620681 (2003-09-01), Kim et al.
patent: 6743675 (2004-06-01), Ding
patent: 6818508 (2004-11-01), Shimizu et al.
patent: 7250651 (2007-07-01), Kusters et al.
patent: 7445997 (2008-11-01), Lee et al.
patent: 2002/0072197 (2002-06-01), Kang et al.
patent: 2005/0136601 (2005-06-01), Jang et al.
patent: 2007/0026633 (2007-02-01), Lee
patent: 11-017033 (1999-01-01), None
patent: 10-0284140 (2000-12-01), None
patent: 10-2001-0003787 (2001-01-01), None
patent: 10-0466189 (2005-01-01), None
patent: 10-0466195 (2005-01-01), None
patent: 10-2005-0030008 (2005-03-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing a flash memory device having... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a flash memory device having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a flash memory device having... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4057106